Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth tempera...

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Detalles Bibliográficos
Autores principales: Bietti, S, Somaschini, C, Sarti, E, Koguchi, N, Sanguinetti, S, Isella, G, Chrastina, D, Fedorov, A
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956041/
https://www.ncbi.nlm.nih.gov/pubmed/21076665
http://dx.doi.org/10.1007/s11671-010-9689-8
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author Bietti, S
Somaschini, C
Sarti, E
Koguchi, N
Sanguinetti, S
Isella, G
Chrastina, D
Fedorov, A
author_facet Bietti, S
Somaschini, C
Sarti, E
Koguchi, N
Sanguinetti, S
Isella, G
Chrastina, D
Fedorov, A
author_sort Bietti, S
collection PubMed
description We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
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spelling pubmed-29560412010-11-10 Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy Bietti, S Somaschini, C Sarti, E Koguchi, N Sanguinetti, S Isella, G Chrastina, D Fedorov, A Nanoscale Res Lett Nano Express We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits. Springer 2010-07-18 /pmc/articles/PMC2956041/ /pubmed/21076665 http://dx.doi.org/10.1007/s11671-010-9689-8 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Nano Express
Bietti, S
Somaschini, C
Sarti, E
Koguchi, N
Sanguinetti, S
Isella, G
Chrastina, D
Fedorov, A
Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
title Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
title_full Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
title_fullStr Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
title_full_unstemmed Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
title_short Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
title_sort photoluminescence study of low thermal budget iii–v nanostructures on silicon by droplet epitaxy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2956041/
https://www.ncbi.nlm.nih.gov/pubmed/21076665
http://dx.doi.org/10.1007/s11671-010-9689-8
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