Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the im...

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Autores principales: Kriouche, N, Leroux, M, Vennéguès, P, Nemoz, M, Nataf, G, de Mierry, P
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991163/
https://www.ncbi.nlm.nih.gov/pubmed/21170140
http://dx.doi.org/10.1007/s11671-010-9724-9
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author Kriouche, N
Leroux, M
Vennéguès, P
Nemoz, M
Nataf, G
de Mierry, P
author_facet Kriouche, N
Leroux, M
Vennéguès, P
Nemoz, M
Nataf, G
de Mierry, P
author_sort Kriouche, N
collection PubMed
description Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied.
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spelling pubmed-29911632010-12-15 Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth Kriouche, N Leroux, M Vennéguès, P Nemoz, M Nataf, G de Mierry, P Nanoscale Res Lett Special Issue Article Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied. Springer 2010-09-02 /pmc/articles/PMC2991163/ /pubmed/21170140 http://dx.doi.org/10.1007/s11671-010-9724-9 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Kriouche, N
Leroux, M
Vennéguès, P
Nemoz, M
Nataf, G
de Mierry, P
Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
title Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
title_full Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
title_fullStr Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
title_full_unstemmed Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
title_short Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
title_sort filtering of defects in semipolar (11−22) gan using 2-steps lateral epitaxial overgrowth
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991163/
https://www.ncbi.nlm.nih.gov/pubmed/21170140
http://dx.doi.org/10.1007/s11671-010-9724-9
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