Cargando…
Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the im...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991163/ https://www.ncbi.nlm.nih.gov/pubmed/21170140 http://dx.doi.org/10.1007/s11671-010-9724-9 |