Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10(7) to 10(9) cm(−2). The i...

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Detalles Bibliográficos
Autores principales: Bietti, S, Somaschini, C, Koguchi, N, Frigeri, C, Sanguinetti, S
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991201/
https://www.ncbi.nlm.nih.gov/pubmed/21170400
http://dx.doi.org/10.1007/s11671-010-9760-5
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author Bietti, S
Somaschini, C
Koguchi, N
Frigeri, C
Sanguinetti, S
author_facet Bietti, S
Somaschini, C
Koguchi, N
Frigeri, C
Sanguinetti, S
author_sort Bietti, S
collection PubMed
description We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10(7) to 10(9) cm(−2). The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III–V quantum nanostructures directly on silicon substrate.
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spelling pubmed-29912012010-12-15 Self-Assembled Local Artificial Substrates of GaAs on Si Substrate Bietti, S Somaschini, C Koguchi, N Frigeri, C Sanguinetti, S Nanoscale Res Lett Special Issue Article We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10(7) to 10(9) cm(−2). The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III–V quantum nanostructures directly on silicon substrate. Springer 2010-08-31 /pmc/articles/PMC2991201/ /pubmed/21170400 http://dx.doi.org/10.1007/s11671-010-9760-5 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Bietti, S
Somaschini, C
Koguchi, N
Frigeri, C
Sanguinetti, S
Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
title Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
title_full Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
title_fullStr Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
title_full_unstemmed Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
title_short Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
title_sort self-assembled local artificial substrates of gaas on si substrate
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991201/
https://www.ncbi.nlm.nih.gov/pubmed/21170400
http://dx.doi.org/10.1007/s11671-010-9760-5
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AT somaschinic selfassembledlocalartificialsubstratesofgaasonsisubstrate
AT koguchin selfassembledlocalartificialsubstratesofgaasonsisubstrate
AT frigeric selfassembledlocalartificialsubstratesofgaasonsisubstrate
AT sanguinettis selfassembledlocalartificialsubstratesofgaasonsisubstrate

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