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Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10(7) to 10(9) cm(−2). The i...
| Autores principales: | , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991201/ https://www.ncbi.nlm.nih.gov/pubmed/21170400 http://dx.doi.org/10.1007/s11671-010-9760-5 |