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Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal

We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for...

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Detalles Bibliográficos
Autores principales: Urbańczyk, A, Hamhuis, GJ, Nötzel, R
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991211/
https://www.ncbi.nlm.nih.gov/pubmed/21170402
http://dx.doi.org/10.1007/s11671-010-9785-9
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author Urbańczyk, A
Hamhuis, GJ
Nötzel, R
author_facet Urbańczyk, A
Hamhuis, GJ
Nötzel, R
author_sort Urbańczyk, A
collection PubMed
description We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal–semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.
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spelling pubmed-29912112010-12-15 Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal Urbańczyk, A Hamhuis, GJ Nötzel, R Nanoscale Res Lett Special Issue Article We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal–semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps. Springer 2010-09-28 /pmc/articles/PMC2991211/ /pubmed/21170402 http://dx.doi.org/10.1007/s11671-010-9785-9 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Urbańczyk, A
Hamhuis, GJ
Nötzel, R
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal
title Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal
title_full Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal
title_fullStr Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal
title_full_unstemmed Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal
title_short Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal
title_sort single ingaas quantum dot coupling to the plasmon resonance of a metal nanocrystal
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991211/
https://www.ncbi.nlm.nih.gov/pubmed/21170402
http://dx.doi.org/10.1007/s11671-010-9785-9
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