Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in th...

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Detalles Bibliográficos
Autores principales: Shafi, M, Mari, RH, Khatab, A, Taylor, D, Henini, M
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991218/
https://www.ncbi.nlm.nih.gov/pubmed/21170404
http://dx.doi.org/10.1007/s11671-010-9820-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991218/
https://www.ncbi.nlm.nih.gov/pubmed/21170404
http://dx.doi.org/10.1007/s11671-010-9820-x

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