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Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction dom...

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Detalles Bibliográficos
Autores principales: Konishi, Tomoya, Tsukamoto, Shiro
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991234/
https://www.ncbi.nlm.nih.gov/pubmed/21170412
http://dx.doi.org/10.1007/s11671-010-9754-3
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author Konishi, Tomoya
Tsukamoto, Shiro
author_facet Konishi, Tomoya
Tsukamoto, Shiro
author_sort Konishi, Tomoya
collection PubMed
description Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains.
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spelling pubmed-29912342010-12-15 Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation Konishi, Tomoya Tsukamoto, Shiro Nanoscale Res Lett Special Issue Article Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains. Springer 2010-08-24 /pmc/articles/PMC2991234/ /pubmed/21170412 http://dx.doi.org/10.1007/s11671-010-9754-3 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Konishi, Tomoya
Tsukamoto, Shiro
Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation
title Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation
title_full Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation
title_fullStr Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation
title_full_unstemmed Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation
title_short Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation
title_sort statistical analysis of surface reconstruction domains on inas wetting layer preceding quantum dot formation
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991234/
https://www.ncbi.nlm.nih.gov/pubmed/21170412
http://dx.doi.org/10.1007/s11671-010-9754-3
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