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Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microsc...

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Detalles Bibliográficos
Autores principales: Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991240/
https://www.ncbi.nlm.nih.gov/pubmed/21170414
http://dx.doi.org/10.1007/s11671-010-9752-5
Descripción
Sumario:We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.