Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microsc...

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Detalles Bibliográficos
Autores principales: Somaschini, C, Bietti, S, Fedorov, A, Koguchi, N, Sanguinetti, S
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Special Issue Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991240/
https://www.ncbi.nlm.nih.gov/pubmed/21170414
http://dx.doi.org/10.1007/s11671-010-9752-5
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author Somaschini, C
Bietti, S
Fedorov, A
Koguchi, N
Sanguinetti, S
author_facet Somaschini, C
Bietti, S
Fedorov, A
Koguchi, N
Sanguinetti, S
author_sort Somaschini, C
collection PubMed
description We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.
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spelling pubmed-29912402010-12-15 Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy Somaschini, C Bietti, S Fedorov, A Koguchi, N Sanguinetti, S Nanoscale Res Lett Special Issue Article We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background. Springer 2010-08-21 /pmc/articles/PMC2991240/ /pubmed/21170414 http://dx.doi.org/10.1007/s11671-010-9752-5 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Special Issue Article
Somaschini, C
Bietti, S
Fedorov, A
Koguchi, N
Sanguinetti, S
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_full Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_fullStr Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_full_unstemmed Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_short Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_sort growth interruption effect on the fabrication of gaas concentric multiple rings by droplet epitaxy
topic Special Issue Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2991240/
https://www.ncbi.nlm.nih.gov/pubmed/21170414
http://dx.doi.org/10.1007/s11671-010-9752-5
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AT fedorova growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy
AT koguchin growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy
AT sanguinettis growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy

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