Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter...

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Detalles Bibliográficos
Autores principales: Henkel, C., Abermann, S., Bethge, O., Pozzovivo, G., Klang, P., Stöger-Pollach, M., Bertagnolli, E.
Formato: Texto
Lenguaje:English
Publicado: Elsevier 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3065308/
https://www.ncbi.nlm.nih.gov/pubmed/21461054
http://dx.doi.org/10.1016/j.mee.2010.11.003
Descripción
Sumario:Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 10(11) eV(−1) cm(−2), a low subthreshold slope of 70-80 mV/decade, and an I(ON)/I(OFF) current ratio greater than 2 × 10(6) are obtained.

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