Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter...

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Autores principales: Henkel, C., Abermann, S., Bethge, O., Pozzovivo, G., Klang, P., Stöger-Pollach, M., Bertagnolli, E.
Formato: Texto
Lenguaje:English
Publicado: Elsevier 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3065308/
https://www.ncbi.nlm.nih.gov/pubmed/21461054
http://dx.doi.org/10.1016/j.mee.2010.11.003
_version_ 1782200964658233344
author Henkel, C.
Abermann, S.
Bethge, O.
Pozzovivo, G.
Klang, P.
Stöger-Pollach, M.
Bertagnolli, E.
author_facet Henkel, C.
Abermann, S.
Bethge, O.
Pozzovivo, G.
Klang, P.
Stöger-Pollach, M.
Bertagnolli, E.
author_sort Henkel, C.
collection PubMed
description Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 10(11) eV(−1) cm(−2), a low subthreshold slope of 70-80 mV/decade, and an I(ON)/I(OFF) current ratio greater than 2 × 10(6) are obtained.
format Text
id pubmed-3065308
institution National Center for Biotechnology Information
language English
publishDate 2011
publisher Elsevier
record_format MEDLINE/PubMed
spelling pubmed-30653082011-03-30 Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics Henkel, C. Abermann, S. Bethge, O. Pozzovivo, G. Klang, P. Stöger-Pollach, M. Bertagnolli, E. Microelectron Eng Article Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 10(11) eV(−1) cm(−2), a low subthreshold slope of 70-80 mV/decade, and an I(ON)/I(OFF) current ratio greater than 2 × 10(6) are obtained. Elsevier 2011-03 /pmc/articles/PMC3065308/ /pubmed/21461054 http://dx.doi.org/10.1016/j.mee.2010.11.003 Text en © 2011 Elsevier B.V. https://creativecommons.org/licenses/by-nc-nd/3.0/ Open Access under CC BY-NC-ND 3.0 (https://creativecommons.org/licenses/by-nc-nd/3.0/) license
spellingShingle Article
Henkel, C.
Abermann, S.
Bethge, O.
Pozzovivo, G.
Klang, P.
Stöger-Pollach, M.
Bertagnolli, E.
Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics
title Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics
title_full Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics
title_fullStr Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics
title_full_unstemmed Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics
title_short Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics
title_sort schottky barrier soi-mosfets with high-k la(2)o(3)/zro(2) gate dielectrics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3065308/
https://www.ncbi.nlm.nih.gov/pubmed/21461054
http://dx.doi.org/10.1016/j.mee.2010.11.003
work_keys_str_mv AT henkelc schottkybarriersoimosfetswithhighkla2o3zro2gatedielectrics
AT abermanns schottkybarriersoimosfetswithhighkla2o3zro2gatedielectrics
AT bethgeo schottkybarriersoimosfetswithhighkla2o3zro2gatedielectrics
AT pozzovivog schottkybarriersoimosfetswithhighkla2o3zro2gatedielectrics
AT klangp schottkybarriersoimosfetswithhighkla2o3zro2gatedielectrics
AT stogerpollachm schottkybarriersoimosfetswithhighkla2o3zro2gatedielectrics
AT bertagnollie schottkybarriersoimosfetswithhighkla2o3zro2gatedielectrics

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