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Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements
The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Molecular Diversity Preservation International (MDPI)
2011
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3127112/ https://www.ncbi.nlm.nih.gov/pubmed/21731436 http://dx.doi.org/10.3390/ijms12042200 |
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author | Sánchez, Pascal Lorenzo, Olaya Menéndez, Armando Menéndez, Jose Luis Gomez, David Pereiro, Rosario Fernández, Beatriz |
author_facet | Sánchez, Pascal Lorenzo, Olaya Menéndez, Armando Menéndez, Jose Luis Gomez, David Pereiro, Rosario Fernández, Beatriz |
author_sort | Sánchez, Pascal |
collection | PubMed |
description | The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B(2)H(6) and SiH(4) fluxes (B(2)H(6) from 12 sccm to 20 sccm and SiH(4) from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples. |
format | Online Article Text |
id | pubmed-3127112 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2011 |
publisher | Molecular Diversity Preservation International (MDPI) |
record_format | MEDLINE/PubMed |
spelling | pubmed-31271122011-06-30 Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements Sánchez, Pascal Lorenzo, Olaya Menéndez, Armando Menéndez, Jose Luis Gomez, David Pereiro, Rosario Fernández, Beatriz Int J Mol Sci Article The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B(2)H(6) and SiH(4) fluxes (B(2)H(6) from 12 sccm to 20 sccm and SiH(4) from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples. Molecular Diversity Preservation International (MDPI) 2011-03-30 /pmc/articles/PMC3127112/ /pubmed/21731436 http://dx.doi.org/10.3390/ijms12042200 Text en © 2011 by the authors; licensee MDPI, Basel, Switzerland. http://creativecommons.org/licenses/by/3.0 This article is an open-access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Article Sánchez, Pascal Lorenzo, Olaya Menéndez, Armando Menéndez, Jose Luis Gomez, David Pereiro, Rosario Fernández, Beatriz Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements |
title | Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements |
title_full | Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements |
title_fullStr | Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements |
title_full_unstemmed | Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements |
title_short | Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements |
title_sort | characterization of doped amorphous silicon thin films through the investigation of dopant elements by glow discharge spectrometry. a correlation of conductivity and bandgap energy measurements |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3127112/ https://www.ncbi.nlm.nih.gov/pubmed/21731436 http://dx.doi.org/10.3390/ijms12042200 |
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