X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

[Image: see text] For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent...

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Detalles Bibliográficos
Autores principales: Hrauda, Nina, Zhang, Jianjun, Wintersberger, Eugen, Etzelstorfer, Tanja, Mandl, Bernhard, Stangl, Julian, Carbone, Dina, Holý, Vaclav, Jovanović, Vladimir, Biasotto, Cleber, Nanver, Lis K., Moers, Jürgen, Grützmacher, Detlev, Bauer, Günther
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2011
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3136111/
https://www.ncbi.nlm.nih.gov/pubmed/21627099
http://dx.doi.org/10.1021/nl2013289

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3136111/
https://www.ncbi.nlm.nih.gov/pubmed/21627099
http://dx.doi.org/10.1021/nl2013289

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