Strained MOSFETs on ordered SiGe dots

The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain...

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Autores principales: Cervenka, Johann, Kosina, Hans, Selberherr, Siegfried, Zhang, Jianjun, Hrauda, Nina, Stangl, Julian, Bauer, Guenther, Vastola, Guglielmo, Marzegalli, Anna, Montalenti, Francesco, Miglio, Leo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Pergamon Press 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3197885/
https://www.ncbi.nlm.nih.gov/pubmed/22180668
http://dx.doi.org/10.1016/j.sse.2011.06.041
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author Cervenka, Johann
Kosina, Hans
Selberherr, Siegfried
Zhang, Jianjun
Hrauda, Nina
Stangl, Julian
Bauer, Guenther
Vastola, Guglielmo
Marzegalli, Anna
Montalenti, Francesco
Miglio, Leo
author_facet Cervenka, Johann
Kosina, Hans
Selberherr, Siegfried
Zhang, Jianjun
Hrauda, Nina
Stangl, Julian
Bauer, Guenther
Vastola, Guglielmo
Marzegalli, Anna
Montalenti, Francesco
Miglio, Leo
author_sort Cervenka, Johann
collection PubMed
description The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content in the SiGe island is 30% on average, showing an increase towards the top of the island. Based on the extracted structure information, three-dimensional strain profiles are calculated and device simulations are performed. Up to 15% enhancement of the NMOS saturation current is predicted.
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spelling pubmed-31978852011-12-15 Strained MOSFETs on ordered SiGe dots Cervenka, Johann Kosina, Hans Selberherr, Siegfried Zhang, Jianjun Hrauda, Nina Stangl, Julian Bauer, Guenther Vastola, Guglielmo Marzegalli, Anna Montalenti, Francesco Miglio, Leo Solid State Electron Article The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content in the SiGe island is 30% on average, showing an increase towards the top of the island. Based on the extracted structure information, three-dimensional strain profiles are calculated and device simulations are performed. Up to 15% enhancement of the NMOS saturation current is predicted. Pergamon Press 2011-11 /pmc/articles/PMC3197885/ /pubmed/22180668 http://dx.doi.org/10.1016/j.sse.2011.06.041 Text en © 2011 Elsevier Ltd. https://creativecommons.org/licenses/by-nc-nd/3.0/ Open Access under CC BY-NC-ND 3.0 (https://creativecommons.org/licenses/by-nc-nd/3.0/) license
spellingShingle Article
Cervenka, Johann
Kosina, Hans
Selberherr, Siegfried
Zhang, Jianjun
Hrauda, Nina
Stangl, Julian
Bauer, Guenther
Vastola, Guglielmo
Marzegalli, Anna
Montalenti, Francesco
Miglio, Leo
Strained MOSFETs on ordered SiGe dots
title Strained MOSFETs on ordered SiGe dots
title_full Strained MOSFETs on ordered SiGe dots
title_fullStr Strained MOSFETs on ordered SiGe dots
title_full_unstemmed Strained MOSFETs on ordered SiGe dots
title_short Strained MOSFETs on ordered SiGe dots
title_sort strained mosfets on ordered sige dots
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3197885/
https://www.ncbi.nlm.nih.gov/pubmed/22180668
http://dx.doi.org/10.1016/j.sse.2011.06.041
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