Formation of SiC nanoparticles in an atmospheric microwave plasma

We describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS) as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with sizes ranging from 7 nm to about 20 nm accord...

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Detalles Bibliográficos
Autores principales: Vennekamp, Martin, Bauer, Ingolf, Groh, Matthias, Sperling, Evgeni, Ueberlein, Susanne, Myndyk, Maksym, Mäder, Gerrit, Kaskel, Stefan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2011
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3201619/
https://www.ncbi.nlm.nih.gov/pubmed/22043455
http://dx.doi.org/10.3762/bjnano.2.71
Descripción
Sumario:We describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS) as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with sizes ranging from 7 nm to about 20 nm according to BET and XRD measurements are produced. The dependency of the particle size on the process parameters is evaluated statistically and explained with growth-rate equations derived from the theory of Ostwald ripening. The results show that the particle size is mainly influenced by the concentration of the precursor material in the plasma.

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