Circular polarization in a non-magnetic resonant tunneling device

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emissio...

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Detalles Bibliográficos
Autores principales: dos Santos, Lara F, Gobato, Yara Galvão, Teodoro, Márcio D, Lopez-Richard, Victor, Marques, Gilmar E, Brasil, Maria JSP, Orlita, Milan, Kunc, Jan, Maude, Duncan K, Henini, Mohamed, Airey, Robert J
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211145/
https://www.ncbi.nlm.nih.gov/pubmed/21711613
http://dx.doi.org/10.1186/1556-276X-6-101
Descripción
Sumario:We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

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