Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy

Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localiz...

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Detalles Bibliográficos
Autores principales: Lo, Shun-Tsung, Chuang, Chiashain, Lin, Sheng-Di, Chen, Kuang Yao, Liang, Chi-Te, Lin, Shih-Wei, Wu, Jau-Yang, Yeh, Mao-Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211146/
https://www.ncbi.nlm.nih.gov/pubmed/24576326
http://dx.doi.org/10.1186/1556-276X-6-102
Descripción
Sumario:Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

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