Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy

Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localiz...

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Autores principales: Lo, Shun-Tsung, Chuang, Chiashain, Lin, Sheng-Di, Chen, Kuang Yao, Liang, Chi-Te, Lin, Shih-Wei, Wu, Jau-Yang, Yeh, Mao-Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211146/
https://www.ncbi.nlm.nih.gov/pubmed/24576326
http://dx.doi.org/10.1186/1556-276X-6-102
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author Lo, Shun-Tsung
Chuang, Chiashain
Lin, Sheng-Di
Chen, Kuang Yao
Liang, Chi-Te
Lin, Shih-Wei
Wu, Jau-Yang
Yeh, Mao-Rong
author_facet Lo, Shun-Tsung
Chuang, Chiashain
Lin, Sheng-Di
Chen, Kuang Yao
Liang, Chi-Te
Lin, Shih-Wei
Wu, Jau-Yang
Yeh, Mao-Rong
author_sort Lo, Shun-Tsung
collection PubMed
description Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.
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spelling pubmed-32111462011-11-09 Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy Lo, Shun-Tsung Chuang, Chiashain Lin, Sheng-Di Chen, Kuang Yao Liang, Chi-Te Lin, Shih-Wei Wu, Jau-Yang Yeh, Mao-Rong Nanoscale Res Lett Nano Express Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film. Springer 2011-01-26 /pmc/articles/PMC3211146/ /pubmed/24576326 http://dx.doi.org/10.1186/1556-276X-6-102 Text en Copyright ©2011 Liang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Lo, Shun-Tsung
Chuang, Chiashain
Lin, Sheng-Di
Chen, Kuang Yao
Liang, Chi-Te
Lin, Shih-Wei
Wu, Jau-Yang
Yeh, Mao-Rong
Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_full Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_fullStr Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_full_unstemmed Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_short Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
title_sort magnetotransport in an aluminum thin film on a gaas substrate grown by molecular beam epitaxy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211146/
https://www.ncbi.nlm.nih.gov/pubmed/24576326
http://dx.doi.org/10.1186/1556-276X-6-102
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