GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser...

Descripción completa

Detalles Bibliográficos
Autores principales: Chaqmaqchee, Faten Adel Ismail, Mazzucato, Simone, Oduncuoglu, Murat, Balkan, Naci, Sun, Yun, Gunes, Mustafa, Hugues, Maxime, Hopkinson, Mark
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211148/
https://www.ncbi.nlm.nih.gov/pubmed/21711630
http://dx.doi.org/10.1186/1556-276X-6-104

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211148/
https://www.ncbi.nlm.nih.gov/pubmed/21711630
http://dx.doi.org/10.1186/1556-276X-6-104

Ejemplares similares