On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single expon...

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Detalles Bibliográficos
Autores principales: Zatryb, G, Podhorodecki, A, Misiewicz, J, Cardin, J, Gourbilleau, F
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211150/
https://www.ncbi.nlm.nih.gov/pubmed/21711642
http://dx.doi.org/10.1186/1556-276X-6-106
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author Zatryb, G
Podhorodecki, A
Misiewicz, J
Cardin, J
Gourbilleau, F
author_facet Zatryb, G
Podhorodecki, A
Misiewicz, J
Cardin, J
Gourbilleau, F
author_sort Zatryb, G
collection PubMed
description The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.
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spelling pubmed-32111502011-11-09 On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals Zatryb, G Podhorodecki, A Misiewicz, J Cardin, J Gourbilleau, F Nanoscale Res Lett Nano Express The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples. Springer 2011-01-31 /pmc/articles/PMC3211150/ /pubmed/21711642 http://dx.doi.org/10.1186/1556-276X-6-106 Text en Copyright ©2011 Zatryb et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zatryb, G
Podhorodecki, A
Misiewicz, J
Cardin, J
Gourbilleau, F
On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
title On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
title_full On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
title_fullStr On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
title_full_unstemmed On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
title_short On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
title_sort on the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211150/
https://www.ncbi.nlm.nih.gov/pubmed/21711642
http://dx.doi.org/10.1186/1556-276X-6-106
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