Cargando…
Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al(2)O(3)-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211152/ https://www.ncbi.nlm.nih.gov/pubmed/21711617 http://dx.doi.org/10.1186/1556-276X-6-108 |
| Sumario: | In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al(2)O(3)-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al(2)O(3 )layers have been also analyzed. |
|---|