Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al(2)O(3)-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the...

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Detalles Bibliográficos
Autores principales: Lanza, Mario, Iglesias, Vanessa, Porti, Marc, Nafria, Montse, Aymerich, Xavier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211152/
https://www.ncbi.nlm.nih.gov/pubmed/21711617
http://dx.doi.org/10.1186/1556-276X-6-108

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211152/
https://www.ncbi.nlm.nih.gov/pubmed/21711617
http://dx.doi.org/10.1186/1556-276X-6-108

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