Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference...

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Detalles Bibliográficos
Autores principales: Xu, Tao, Sulerzycki, Julien, Nys, Jean Philippe, Patriarche, Gilles, Grandidier, Bruno, Stiévenard, Didier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211158/
https://www.ncbi.nlm.nih.gov/pubmed/21711645
http://dx.doi.org/10.1186/1556-276X-6-113

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211158/
https://www.ncbi.nlm.nih.gov/pubmed/21711645
http://dx.doi.org/10.1186/1556-276X-6-113

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