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Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211162/ https://www.ncbi.nlm.nih.gov/pubmed/21711618 http://dx.doi.org/10.1186/1556-276X-6-117 |