Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-orde...

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Detalles Bibliográficos
Autores principales: Xu, Pengfa, Lu, Jun, Chen, Lin, Yan, Shuai, Meng, Haijuan, Pan, Guoqiang, Zhao, Jianhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211171/
https://www.ncbi.nlm.nih.gov/pubmed/21711651
http://dx.doi.org/10.1186/1556-276X-6-125
Descripción
Sumario:MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature T(t), at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated T(t )of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions. PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe

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