Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-orde...

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Autores principales: Xu, Pengfa, Lu, Jun, Chen, Lin, Yan, Shuai, Meng, Haijuan, Pan, Guoqiang, Zhao, Jianhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211171/
https://www.ncbi.nlm.nih.gov/pubmed/21711651
http://dx.doi.org/10.1186/1556-276X-6-125
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author Xu, Pengfa
Lu, Jun
Chen, Lin
Yan, Shuai
Meng, Haijuan
Pan, Guoqiang
Zhao, Jianhua
author_facet Xu, Pengfa
Lu, Jun
Chen, Lin
Yan, Shuai
Meng, Haijuan
Pan, Guoqiang
Zhao, Jianhua
author_sort Xu, Pengfa
collection PubMed
description MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature T(t), at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated T(t )of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions. PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe
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spelling pubmed-32111712011-11-09 Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110) Xu, Pengfa Lu, Jun Chen, Lin Yan, Shuai Meng, Haijuan Pan, Guoqiang Zhao, Jianhua Nanoscale Res Lett Nano Express MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature T(t), at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated T(t )of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions. PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe Springer 2011-02-09 /pmc/articles/PMC3211171/ /pubmed/21711651 http://dx.doi.org/10.1186/1556-276X-6-125 Text en Copyright ©2011 Xu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Xu, Pengfa
Lu, Jun
Chen, Lin
Yan, Shuai
Meng, Haijuan
Pan, Guoqiang
Zhao, Jianhua
Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
title Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
title_full Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
title_fullStr Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
title_full_unstemmed Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
title_short Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
title_sort strain-induced high ferromagnetic transition temperature of mnas epilayer grown on gaas (110)
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211171/
https://www.ncbi.nlm.nih.gov/pubmed/21711651
http://dx.doi.org/10.1186/1556-276X-6-125
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