Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electro...

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Detalles Bibliográficos
Autores principales: Greco, Giuseppe, Giannazzo, Filippo, Frazzetto, Alessia, Raineri, Vito, Roccaforte, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211179/
https://www.ncbi.nlm.nih.gov/pubmed/21711655
http://dx.doi.org/10.1186/1556-276X-6-132

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211179/
https://www.ncbi.nlm.nih.gov/pubmed/21711655
http://dx.doi.org/10.1186/1556-276X-6-132

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