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Scanning tip measurement for identification of point defects

Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and sc...

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Detalles Bibliográficos
Autores principales: Dózsa, László, Molnár, György, Raineri, Vito, Giannazzo, Filippo, Ferencz, János, Lányi, Štefan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211188/
https://www.ncbi.nlm.nih.gov/pubmed/21711635
http://dx.doi.org/10.1186/1556-276X-6-140

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