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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields...

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Detalles Bibliográficos
Autores principales: Hu, Changcheng, Ye, Huiqi, Wang, Gang, Tian, Haitao, Wang, Wenxin, Wang, Wenquan, Liu, Baoli, Marie, Xavier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211199/
https://www.ncbi.nlm.nih.gov/pubmed/21711662
http://dx.doi.org/10.1186/1556-276X-6-149
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author Hu, Changcheng
Ye, Huiqi
Wang, Gang
Tian, Haitao
Wang, Wenxin
Wang, Wenquan
Liu, Baoli
Marie, Xavier
author_facet Hu, Changcheng
Ye, Huiqi
Wang, Gang
Tian, Haitao
Wang, Wenxin
Wang, Wenquan
Liu, Baoli
Marie, Xavier
author_sort Hu, Changcheng
collection PubMed
description Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D(s).
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spelling pubmed-32111992011-11-09 Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells Hu, Changcheng Ye, Huiqi Wang, Gang Tian, Haitao Wang, Wenxin Wang, Wenquan Liu, Baoli Marie, Xavier Nanoscale Res Lett Nano Express Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D(s). Springer 2011-02-16 /pmc/articles/PMC3211199/ /pubmed/21711662 http://dx.doi.org/10.1186/1556-276X-6-149 Text en Copyright ©2011 Hu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Hu, Changcheng
Ye, Huiqi
Wang, Gang
Tian, Haitao
Wang, Wenxin
Wang, Wenquan
Liu, Baoli
Marie, Xavier
Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
title Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
title_full Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
title_fullStr Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
title_full_unstemmed Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
title_short Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
title_sort room temperature spin diffusion in (110) gaas/algaas quantum wells
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211199/
https://www.ncbi.nlm.nih.gov/pubmed/21711662
http://dx.doi.org/10.1186/1556-276X-6-149
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