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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2011
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211199/ https://www.ncbi.nlm.nih.gov/pubmed/21711662 http://dx.doi.org/10.1186/1556-276X-6-149 |
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author | Hu, Changcheng Ye, Huiqi Wang, Gang Tian, Haitao Wang, Wenxin Wang, Wenquan Liu, Baoli Marie, Xavier |
author_facet | Hu, Changcheng Ye, Huiqi Wang, Gang Tian, Haitao Wang, Wenxin Wang, Wenquan Liu, Baoli Marie, Xavier |
author_sort | Hu, Changcheng |
collection | PubMed |
description | Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D(s). |
format | Online Article Text |
id | pubmed-3211199 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2011 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-32111992011-11-09 Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells Hu, Changcheng Ye, Huiqi Wang, Gang Tian, Haitao Wang, Wenxin Wang, Wenquan Liu, Baoli Marie, Xavier Nanoscale Res Lett Nano Express Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D(s). Springer 2011-02-16 /pmc/articles/PMC3211199/ /pubmed/21711662 http://dx.doi.org/10.1186/1556-276X-6-149 Text en Copyright ©2011 Hu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Hu, Changcheng Ye, Huiqi Wang, Gang Tian, Haitao Wang, Wenxin Wang, Wenquan Liu, Baoli Marie, Xavier Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells |
title | Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells |
title_full | Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells |
title_fullStr | Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells |
title_full_unstemmed | Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells |
title_short | Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells |
title_sort | room temperature spin diffusion in (110) gaas/algaas quantum wells |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211199/ https://www.ncbi.nlm.nih.gov/pubmed/21711662 http://dx.doi.org/10.1186/1556-276X-6-149 |
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