Cargando…

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields...

Descripción completa

Detalles Bibliográficos
Autores principales:	Hu, Changcheng, Ye, Huiqi, Wang, Gang, Tian, Haitao, Wang, Wenxin, Wang, Wenquan, Liu, Baoli, Marie, Xavier
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211199/ https://www.ncbi.nlm.nih.gov/pubmed/21711662 http://dx.doi.org/10.1186/1556-276X-6-149

Ejemplares similares

Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
por: Ye, Huiqi, et al.
Publicado: (2011)

Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
por: Han, Lifen, et al.
Publicado: (2011)

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
por: Jo, Masafumi, et al.
Publicado: (2011)

Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings
por: Abbarchi, Marco, et al.
Publicado: (2011)

Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
por: Yu, Jinling, et al.
Publicado: (2016)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
por: Wu, Yao, et al.
Publicado: (2018)

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells
por: Yu, Jinling, et al.
Publicado: (2014)

Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field
por: Telenkov, Maksim P, et al.
Publicado: (2012)

Observation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas
por: Yu, Jinling, et al.
Publicado: (2018)

Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light
por: Zhu, Laipan, et al.
Publicado: (2016)

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
por: Iba, Satoshi, et al.
Publicado: (2021)

Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
por: Shi, Zhenwu, et al.
Publicado: (2013)

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
por: Mari, Riaz H, et al.
Publicado: (2011)

Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires
por: delos Santos, Ramon, et al.
Publicado: (2015)

Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well
por: Zhu, Laipan, et al.
Publicado: (2014)

Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
por: Li, Shu-Shen, et al.
Publicado: (2008)

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures
por: Erol, Ayse, et al.
Publicado: (2012)

Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping
por: Gil-Corrales, John A., et al.
Publicado: (2023)

Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures
por: Mazur, Yu I, et al.
Publicado: (2010)

Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot
por: Millington-Hotze, Peter, et al.
Publicado: (2023)

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells
por: Khalil, Hagir Mohammed, et al.
Publicado: (2011)

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
por: Kasanaboina, Pavan, et al.
Publicado: (2016)

Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy
por: Park, Kwang Wook, et al.
Publicado: (2014)

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates
por: Boras, Giorgos, et al.
Publicado: (2021)

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
por: Utrilla, Antonio D, et al.
Publicado: (2014)

Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
por: Kondratenko, Serhiy V., et al.
Publicado: (2017)

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells
por: Sarcan, Fahrettin, et al.
Publicado: (2012)

Evolution of wetting layer in InAs/GaAs quantum dot system
por: Chen, YH, et al.
Publicado: (2006)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Electronic structures of GaAs/Al(x)Ga(1-x)As quantum double rings
por: Li, Shu-Shen, et al.
Publicado: (2006)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
por: Yuan, Qing, et al.
Publicado: (2018)

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
por: Makhloufi, Hajer, et al.
Publicado: (2014)

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
por: Shafi, M, et al.
Publicado: (2010)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
por: Wang, Zhiming M, et al.
Publicado: (2010)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al(x)Ga(1−x)As quantum well structures
por: Donmez, Omer, et al.
Publicado: (2012)

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
por: Xu, Pengfa, et al.
Publicado: (2011)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces
por: Xu, Xingliang, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_fos4qrqn1mp6m4hks3g4v7g0un