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Characterization of silicon heterojunctions for solar cells

Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good...

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Detalles Bibliográficos
Autores principales: Kleider, Jean-Paul, Alvarez, Jose, Ankudinov, Alexander Vitalievitch, Gudovskikh, Alexander Sergeevitch, Gushchina, Ekaterina Vladimirovna, Labrune, Martin, Maslova, Olga Alexandrovna, Favre, Wilfried, Gueunier-Farret, Marie-Estelle, Roca i Cabarrocas, Pere, Terukov, Eugene Ivanovitch
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211203/
https://www.ncbi.nlm.nih.gov/pubmed/21711658
http://dx.doi.org/10.1186/1556-276X-6-152
Descripción
Sumario:Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.