Hf-based high-k materials for Si nanocrystal floating gate memories

Pure and Si-rich HfO(2 )layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO(2)/SiO(2 )memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO(2 )active l...

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Detalles Bibliográficos
Autores principales: Khomenkova, Larysa, Sahu, Bhabani S, Slaoui, Abdelilah, Gourbilleau, Fabrice
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211225/
https://www.ncbi.nlm.nih.gov/pubmed/21711676
http://dx.doi.org/10.1186/1556-276X-6-172

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211225/
https://www.ncbi.nlm.nih.gov/pubmed/21711676
http://dx.doi.org/10.1186/1556-276X-6-172

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