Valence band offset of wurtzite InN/SrTiO(3 )heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO(3)) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heteroju...

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Detalles Bibliográficos
Autores principales: Li, Zhiwei, Zhang, Biao, Wang, Jun, Liu, Jianming, Liu, Xianglin, Yang, Shaoyan, Zhu, Qinsheng, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211249/
https://www.ncbi.nlm.nih.gov/pubmed/21711731
http://dx.doi.org/10.1186/1556-276X-6-193
Descripción
Sumario:The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO(3)) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO(3).

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