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Valence band offset of wurtzite InN/SrTiO(3 )heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO(3)) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heteroju...

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Detalles Bibliográficos
Autores principales:	Li, Zhiwei, Zhang, Biao, Wang, Jun, Liu, Jianming, Liu, Xianglin, Yang, Shaoyan, Zhu, Qinsheng, Wang, Zhanguo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2011
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211249/ https://www.ncbi.nlm.nih.gov/pubmed/21711731 http://dx.doi.org/10.1186/1556-276X-6-193

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