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Micro-spectroscopy on silicon wafers and solar cells

Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping...

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Autores principales: Gundel, Paul, Schubert, Martin C, Heinz, Friedemann D, Woehl, Robert, Benick, Jan, Giesecke, Johannes A, Suwito, Dominik, Warta, Wilhelm
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211253/
https://www.ncbi.nlm.nih.gov/pubmed/21711723
http://dx.doi.org/10.1186/1556-276X-6-197
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author Gundel, Paul
Schubert, Martin C
Heinz, Friedemann D
Woehl, Robert
Benick, Jan
Giesecke, Johannes A
Suwito, Dominik
Warta, Wilhelm
author_facet Gundel, Paul
Schubert, Martin C
Heinz, Friedemann D
Woehl, Robert
Benick, Jan
Giesecke, Johannes A
Suwito, Dominik
Warta, Wilhelm
author_sort Gundel, Paul
collection PubMed
description Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance) of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes.
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spelling pubmed-32112532011-11-09 Micro-spectroscopy on silicon wafers and solar cells Gundel, Paul Schubert, Martin C Heinz, Friedemann D Woehl, Robert Benick, Jan Giesecke, Johannes A Suwito, Dominik Warta, Wilhelm Nanoscale Res Lett Nano Express Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance) of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes. Springer 2011-03-04 /pmc/articles/PMC3211253/ /pubmed/21711723 http://dx.doi.org/10.1186/1556-276X-6-197 Text en Copyright ©2011 Gundel et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Gundel, Paul
Schubert, Martin C
Heinz, Friedemann D
Woehl, Robert
Benick, Jan
Giesecke, Johannes A
Suwito, Dominik
Warta, Wilhelm
Micro-spectroscopy on silicon wafers and solar cells
title Micro-spectroscopy on silicon wafers and solar cells
title_full Micro-spectroscopy on silicon wafers and solar cells
title_fullStr Micro-spectroscopy on silicon wafers and solar cells
title_full_unstemmed Micro-spectroscopy on silicon wafers and solar cells
title_short Micro-spectroscopy on silicon wafers and solar cells
title_sort micro-spectroscopy on silicon wafers and solar cells
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211253/
https://www.ncbi.nlm.nih.gov/pubmed/21711723
http://dx.doi.org/10.1186/1556-276X-6-197
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