Electromodulated reflectance study of self-assembled Ge/Si quantum dots

We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence ba...

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Autores principales: Yakimov, Andrew, Nikiforov, Aleksandr, Bloshkin, Aleksei, Dvurechenskii, Anatolii
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211264/
https://www.ncbi.nlm.nih.gov/pubmed/21711720
http://dx.doi.org/10.1186/1556-276X-6-208
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author Yakimov, Andrew
Nikiforov, Aleksandr
Bloshkin, Aleksei
Dvurechenskii, Anatolii
author_facet Yakimov, Andrew
Nikiforov, Aleksandr
Bloshkin, Aleksei
Dvurechenskii, Anatolii
author_sort Yakimov, Andrew
collection PubMed
description We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point.
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spelling pubmed-32112642011-11-09 Electromodulated reflectance study of self-assembled Ge/Si quantum dots Yakimov, Andrew Nikiforov, Aleksandr Bloshkin, Aleksei Dvurechenskii, Anatolii Nanoscale Res Lett Nano Express We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point. Springer 2011-03-09 /pmc/articles/PMC3211264/ /pubmed/21711720 http://dx.doi.org/10.1186/1556-276X-6-208 Text en Copyright ©2011 Yakimov et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Yakimov, Andrew
Nikiforov, Aleksandr
Bloshkin, Aleksei
Dvurechenskii, Anatolii
Electromodulated reflectance study of self-assembled Ge/Si quantum dots
title Electromodulated reflectance study of self-assembled Ge/Si quantum dots
title_full Electromodulated reflectance study of self-assembled Ge/Si quantum dots
title_fullStr Electromodulated reflectance study of self-assembled Ge/Si quantum dots
title_full_unstemmed Electromodulated reflectance study of self-assembled Ge/Si quantum dots
title_short Electromodulated reflectance study of self-assembled Ge/Si quantum dots
title_sort electromodulated reflectance study of self-assembled ge/si quantum dots
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211264/
https://www.ncbi.nlm.nih.gov/pubmed/21711720
http://dx.doi.org/10.1186/1556-276X-6-208
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