Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain

The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbi...

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Autores principales: Yu, Jin-Ling, Chen, Yong-Hai, Tang, Chen-Guang, Jiang, ChongYun, Ye, Xiao-Ling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211267/
https://www.ncbi.nlm.nih.gov/pubmed/21711728
http://dx.doi.org/10.1186/1556-276X-6-210
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author Yu, Jin-Ling
Chen, Yong-Hai
Tang, Chen-Guang
Jiang, ChongYun
Ye, Xiao-Ling
author_facet Yu, Jin-Ling
Chen, Yong-Hai
Tang, Chen-Guang
Jiang, ChongYun
Ye, Xiao-Ling
author_sort Yu, Jin-Ling
collection PubMed
description The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. The effect of uniaxial strain on in-plane optical anisotropy (IPOA) is also investigated. The IPOA of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain. PACS 78.66.Fd, 78.20.Bh, 78.20.Fm
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spelling pubmed-32112672011-11-09 Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain Yu, Jin-Ling Chen, Yong-Hai Tang, Chen-Guang Jiang, ChongYun Ye, Xiao-Ling Nanoscale Res Lett Nano Express The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. It is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. The effect of uniaxial strain on in-plane optical anisotropy (IPOA) is also investigated. The IPOA of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain. PACS 78.66.Fd, 78.20.Bh, 78.20.Fm Springer 2011-03-10 /pmc/articles/PMC3211267/ /pubmed/21711728 http://dx.doi.org/10.1186/1556-276X-6-210 Text en Copyright ©2011 Yu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Yu, Jin-Ling
Chen, Yong-Hai
Tang, Chen-Guang
Jiang, ChongYun
Ye, Xiao-Ling
Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
title Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
title_full Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
title_fullStr Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
title_full_unstemmed Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
title_short Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
title_sort observation of strong anisotropic forbidden transitions in (001) ingaas/gaas single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211267/
https://www.ncbi.nlm.nih.gov/pubmed/21711728
http://dx.doi.org/10.1186/1556-276X-6-210
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