Cargando…
Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain
The strong anisotropic forbidden transition has been observed in a series of InGaAs/GaAs single-quantum well with well width ranging between 3 nm and 7 nm at 80 K. Numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbi...
Autores principales: | Yu, Jin-Ling, Chen, Yong-Hai, Tang, Chen-Guang, Jiang, ChongYun, Ye, Xiao-Ling |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2011
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211267/ https://www.ncbi.nlm.nih.gov/pubmed/21711728 http://dx.doi.org/10.1186/1556-276X-6-210 |
Ejemplares similares
-
Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
por: Wang, Zhiming M, et al.
Publicado: (2010) -
Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
por: Ye, Huiqi, et al.
Publicado: (2011) -
Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
por: Moratis, K., et al.
Publicado: (2016) -
Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As(2) and As(4) sources
por: Nedzinskas, Ramūnas, et al.
Publicado: (2012) -
Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes
por: Rodriguez, Raul D, et al.
Publicado: (2012)