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Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a vers...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2011
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211272/ https://www.ncbi.nlm.nih.gov/pubmed/21711738 http://dx.doi.org/10.1186/1556-276X-6-215 |
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author | Harazim, Stefan M Feng, Ping Sanchez, Samuel Deneke, Christoph Mei, Yongfeng Schmidt, Oliver G |
author_facet | Harazim, Stefan M Feng, Ping Sanchez, Samuel Deneke, Christoph Mei, Yongfeng Schmidt, Oliver G |
author_sort | Harazim, Stefan M |
collection | PubMed |
description | Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution. |
format | Online Article Text |
id | pubmed-3211272 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2011 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-32112722011-11-09 Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes Harazim, Stefan M Feng, Ping Sanchez, Samuel Deneke, Christoph Mei, Yongfeng Schmidt, Oliver G Nanoscale Res Lett Nano Express Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution. Springer 2011-03-14 /pmc/articles/PMC3211272/ /pubmed/21711738 http://dx.doi.org/10.1186/1556-276X-6-215 Text en Copyright ©2011 Harazim et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Harazim, Stefan M Feng, Ping Sanchez, Samuel Deneke, Christoph Mei, Yongfeng Schmidt, Oliver G Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes |
title | Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes |
title_full | Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes |
title_fullStr | Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes |
title_full_unstemmed | Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes |
title_short | Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes |
title_sort | integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211272/ https://www.ncbi.nlm.nih.gov/pubmed/21711738 http://dx.doi.org/10.1186/1556-276X-6-215 |
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