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Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes

Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a vers...

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Autores principales: Harazim, Stefan M, Feng, Ping, Sanchez, Samuel, Deneke, Christoph, Mei, Yongfeng, Schmidt, Oliver G
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211272/
https://www.ncbi.nlm.nih.gov/pubmed/21711738
http://dx.doi.org/10.1186/1556-276X-6-215
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author Harazim, Stefan M
Feng, Ping
Sanchez, Samuel
Deneke, Christoph
Mei, Yongfeng
Schmidt, Oliver G
author_facet Harazim, Stefan M
Feng, Ping
Sanchez, Samuel
Deneke, Christoph
Mei, Yongfeng
Schmidt, Oliver G
author_sort Harazim, Stefan M
collection PubMed
description Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.
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spelling pubmed-32112722011-11-09 Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes Harazim, Stefan M Feng, Ping Sanchez, Samuel Deneke, Christoph Mei, Yongfeng Schmidt, Oliver G Nanoscale Res Lett Nano Express Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution. Springer 2011-03-14 /pmc/articles/PMC3211272/ /pubmed/21711738 http://dx.doi.org/10.1186/1556-276X-6-215 Text en Copyright ©2011 Harazim et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Harazim, Stefan M
Feng, Ping
Sanchez, Samuel
Deneke, Christoph
Mei, Yongfeng
Schmidt, Oliver G
Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_full Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_fullStr Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_full_unstemmed Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_short Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
title_sort integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211272/
https://www.ncbi.nlm.nih.gov/pubmed/21711738
http://dx.doi.org/10.1186/1556-276X-6-215
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