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Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides
The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperatu...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2011
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211282/ https://www.ncbi.nlm.nih.gov/pubmed/21711749 http://dx.doi.org/10.1186/1556-276X-6-224 |
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author | Ray, Samit K Das, Samaresh Singha, Raj K Manna, Santanu Dhar, Achintya |
author_facet | Ray, Samit K Das, Samaresh Singha, Raj K Manna, Santanu Dhar, Achintya |
author_sort | Ray, Samit K |
collection | PubMed |
description | The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices. |
format | Online Article Text |
id | pubmed-3211282 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2011 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-32112822011-11-09 Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides Ray, Samit K Das, Samaresh Singha, Raj K Manna, Santanu Dhar, Achintya Nanoscale Res Lett Nano Express The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices. Springer 2011-03-15 /pmc/articles/PMC3211282/ /pubmed/21711749 http://dx.doi.org/10.1186/1556-276X-6-224 Text en Copyright ©2011 Ray et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Ray, Samit K Das, Samaresh Singha, Raj K Manna, Santanu Dhar, Achintya Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides |
title | Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides |
title_full | Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides |
title_fullStr | Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides |
title_full_unstemmed | Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides |
title_short | Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides |
title_sort | structural and optical properties of germanium nanostructures on si(100) and embedded in high-k oxides |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211282/ https://www.ncbi.nlm.nih.gov/pubmed/21711749 http://dx.doi.org/10.1186/1556-276X-6-224 |
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