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Electron cotunneling through doubly occupied quantum dots: effect of spin configuration

A microscopic theory is presented for electron cotunneling through doubly occupied quantum dots in the Coulomb blockade regime. Beyond the semiclassic framework of phenomenological models, a fully quantum mechanical solution for cotunneling of electrons through a one-dimensional quantum dot is obtai...

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Detalles Bibliográficos
Autores principales: Lan, Jian, Sheng, Weidong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211313/
https://www.ncbi.nlm.nih.gov/pubmed/21711763
http://dx.doi.org/10.1186/1556-276X-6-251
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author Lan, Jian
Sheng, Weidong
author_facet Lan, Jian
Sheng, Weidong
author_sort Lan, Jian
collection PubMed
description A microscopic theory is presented for electron cotunneling through doubly occupied quantum dots in the Coulomb blockade regime. Beyond the semiclassic framework of phenomenological models, a fully quantum mechanical solution for cotunneling of electrons through a one-dimensional quantum dot is obtained using a quantum transmitting boundary method without any fitting parameters. It is revealed that the cotunneling conductance exhibits strong dependence on the spin configuration of the electrons confined inside the dot. Especially for the triplet configuration, the conductance shows an obvious deviation from the well-known quadratic dependence on the applied bias voltage. Furthermore, it is found that the cotunneling conductance reveals more sensitive dependence on the barrier width than the height.
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spelling pubmed-32113132011-11-09 Electron cotunneling through doubly occupied quantum dots: effect of spin configuration Lan, Jian Sheng, Weidong Nanoscale Res Lett Nano Express A microscopic theory is presented for electron cotunneling through doubly occupied quantum dots in the Coulomb blockade regime. Beyond the semiclassic framework of phenomenological models, a fully quantum mechanical solution for cotunneling of electrons through a one-dimensional quantum dot is obtained using a quantum transmitting boundary method without any fitting parameters. It is revealed that the cotunneling conductance exhibits strong dependence on the spin configuration of the electrons confined inside the dot. Especially for the triplet configuration, the conductance shows an obvious deviation from the well-known quadratic dependence on the applied bias voltage. Furthermore, it is found that the cotunneling conductance reveals more sensitive dependence on the barrier width than the height. Springer 2011-03-23 /pmc/articles/PMC3211313/ /pubmed/21711763 http://dx.doi.org/10.1186/1556-276X-6-251 Text en Copyright ©2011 Lan and Sheng; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Lan, Jian
Sheng, Weidong
Electron cotunneling through doubly occupied quantum dots: effect of spin configuration
title Electron cotunneling through doubly occupied quantum dots: effect of spin configuration
title_full Electron cotunneling through doubly occupied quantum dots: effect of spin configuration
title_fullStr Electron cotunneling through doubly occupied quantum dots: effect of spin configuration
title_full_unstemmed Electron cotunneling through doubly occupied quantum dots: effect of spin configuration
title_short Electron cotunneling through doubly occupied quantum dots: effect of spin configuration
title_sort electron cotunneling through doubly occupied quantum dots: effect of spin configuration
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211313/
https://www.ncbi.nlm.nih.gov/pubmed/21711763
http://dx.doi.org/10.1186/1556-276X-6-251
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