Simple two-step fabrication method of Bi(2)Te(3 )nanowires

Bismuth telluride (Bi(2)Te(3)) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi(2)Te(3 )nanowires. In this st...

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Detalles Bibliográficos
Autores principales: Kang, Joohoon, Noh, Jin-Seo, Lee, Wooyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211341/
https://www.ncbi.nlm.nih.gov/pubmed/21711810
http://dx.doi.org/10.1186/1556-276X-6-277
Descripción
Sumario:Bismuth telluride (Bi(2)Te(3)) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi(2)Te(3 )nanowires. In this study, a simple and reliable method for the growth of Bi(2)Te(3 )nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi(2)Te(3 )nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

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