Simple two-step fabrication method of Bi(2)Te(3 )nanowires

Bismuth telluride (Bi(2)Te(3)) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi(2)Te(3 )nanowires. In this st...

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Detalles Bibliográficos
Autores principales: Kang, Joohoon, Noh, Jin-Seo, Lee, Wooyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211341/
https://www.ncbi.nlm.nih.gov/pubmed/21711810
http://dx.doi.org/10.1186/1556-276X-6-277
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author Kang, Joohoon
Noh, Jin-Seo
Lee, Wooyoung
author_facet Kang, Joohoon
Noh, Jin-Seo
Lee, Wooyoung
author_sort Kang, Joohoon
collection PubMed
description Bismuth telluride (Bi(2)Te(3)) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi(2)Te(3 )nanowires. In this study, a simple and reliable method for the growth of Bi(2)Te(3 )nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi(2)Te(3 )nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.
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spelling pubmed-32113412011-11-09 Simple two-step fabrication method of Bi(2)Te(3 )nanowires Kang, Joohoon Noh, Jin-Seo Lee, Wooyoung Nanoscale Res Lett Nano Express Bismuth telluride (Bi(2)Te(3)) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi(2)Te(3 )nanowires. In this study, a simple and reliable method for the growth of Bi(2)Te(3 )nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi(2)Te(3 )nanowires grown by our technique are highly single-crystalline and oriented along [110] direction. Springer 2011-04-04 /pmc/articles/PMC3211341/ /pubmed/21711810 http://dx.doi.org/10.1186/1556-276X-6-277 Text en Copyright ©2011 Kang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Kang, Joohoon
Noh, Jin-Seo
Lee, Wooyoung
Simple two-step fabrication method of Bi(2)Te(3 )nanowires
title Simple two-step fabrication method of Bi(2)Te(3 )nanowires
title_full Simple two-step fabrication method of Bi(2)Te(3 )nanowires
title_fullStr Simple two-step fabrication method of Bi(2)Te(3 )nanowires
title_full_unstemmed Simple two-step fabrication method of Bi(2)Te(3 )nanowires
title_short Simple two-step fabrication method of Bi(2)Te(3 )nanowires
title_sort simple two-step fabrication method of bi(2)te(3 )nanowires
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211341/
https://www.ncbi.nlm.nih.gov/pubmed/21711810
http://dx.doi.org/10.1186/1556-276X-6-277
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