Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO(3 )heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, r...

Descripción completa

Detalles Bibliográficos
Autores principales: Jia, Caihong, Chen, Yonghai, Guo, Yan, Liu, Xianglin, Yang, Shaoyan, Zhang, Weifeng, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211403/
https://www.ncbi.nlm.nih.gov/pubmed/21711842
http://dx.doi.org/10.1186/1556-276X-6-316
_version_ 1782215859367837696
author Jia, Caihong
Chen, Yonghai
Guo, Yan
Liu, Xianglin
Yang, Shaoyan
Zhang, Weifeng
Wang, Zhanguo
author_facet Jia, Caihong
Chen, Yonghai
Guo, Yan
Liu, Xianglin
Yang, Shaoyan
Zhang, Weifeng
Wang, Zhanguo
author_sort Jia, Caihong
collection PubMed
description X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO(3 )heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
format Online
Article
Text
id pubmed-3211403
institution National Center for Biotechnology Information
language English
publishDate 2011
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-32114032011-11-09 Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy Jia, Caihong Chen, Yonghai Guo, Yan Liu, Xianglin Yang, Shaoyan Zhang, Weifeng Wang, Zhanguo Nanoscale Res Lett Nano Express X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO(3 )heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices. Springer 2011-04-08 /pmc/articles/PMC3211403/ /pubmed/21711842 http://dx.doi.org/10.1186/1556-276X-6-316 Text en Copyright ©2011 Jia et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Jia, Caihong
Chen, Yonghai
Guo, Yan
Liu, Xianglin
Yang, Shaoyan
Zhang, Weifeng
Wang, Zhanguo
Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy
title Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy
title_full Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy
title_fullStr Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy
title_full_unstemmed Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy
title_short Valence band offset of InN/BaTiO(3 )heterojunction measured by X-ray photoelectron spectroscopy
title_sort valence band offset of inn/batio(3 )heterojunction measured by x-ray photoelectron spectroscopy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211403/
https://www.ncbi.nlm.nih.gov/pubmed/21711842
http://dx.doi.org/10.1186/1556-276X-6-316
work_keys_str_mv AT jiacaihong valencebandoffsetofinnbatio3heterojunctionmeasuredbyxrayphotoelectronspectroscopy
AT chenyonghai valencebandoffsetofinnbatio3heterojunctionmeasuredbyxrayphotoelectronspectroscopy
AT guoyan valencebandoffsetofinnbatio3heterojunctionmeasuredbyxrayphotoelectronspectroscopy
AT liuxianglin valencebandoffsetofinnbatio3heterojunctionmeasuredbyxrayphotoelectronspectroscopy
AT yangshaoyan valencebandoffsetofinnbatio3heterojunctionmeasuredbyxrayphotoelectronspectroscopy
AT zhangweifeng valencebandoffsetofinnbatio3heterojunctionmeasuredbyxrayphotoelectronspectroscopy
AT wangzhanguo valencebandoffsetofinnbatio3heterojunctionmeasuredbyxrayphotoelectronspectroscopy

Ejemplares similares