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A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates

Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bor...

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Detalles Bibliográficos
Autores principales: Zhong, Zhenyang, Gong, Hua, Ma, Yingjie, Fan, Yongliang, Jiang, Zuimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211410/
https://www.ncbi.nlm.nih.gov/pubmed/21711814
http://dx.doi.org/10.1186/1556-276X-6-322
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author Zhong, Zhenyang
Gong, Hua
Ma, Yingjie
Fan, Yongliang
Jiang, Zuimin
author_facet Zhong, Zhenyang
Gong, Hua
Ma, Yingjie
Fan, Yongliang
Jiang, Zuimin
author_sort Zhong, Zhenyang
collection PubMed
description Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications. PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps
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spelling pubmed-32114102011-11-09 A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates Zhong, Zhenyang Gong, Hua Ma, Yingjie Fan, Yongliang Jiang, Zuimin Nanoscale Res Lett Nano Express Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications. PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps Springer 2011-04-11 /pmc/articles/PMC3211410/ /pubmed/21711814 http://dx.doi.org/10.1186/1556-276X-6-322 Text en Copyright ©2011 Zhong et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zhong, Zhenyang
Gong, Hua
Ma, Yingjie
Fan, Yongliang
Jiang, Zuimin
A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
title A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
title_full A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
title_fullStr A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
title_full_unstemmed A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
title_short A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
title_sort promising routine to fabricate gesi nanowires via self-assembly on miscut si (001) substrates
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211410/
https://www.ncbi.nlm.nih.gov/pubmed/21711814
http://dx.doi.org/10.1186/1556-276X-6-322
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