Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature...

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Detalles Bibliográficos
Autores principales: Zhao, HX, Yoon, SF, Tong, CZ, Liu, CY, Wang, R, Cao, Q
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211460/
https://www.ncbi.nlm.nih.gov/pubmed/27502659
http://dx.doi.org/10.1007/s11671-010-9798-4
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author Zhao, HX
Yoon, SF
Tong, CZ
Liu, CY
Wang, R
Cao, Q
author_facet Zhao, HX
Yoon, SF
Tong, CZ
Liu, CY
Wang, R
Cao, Q
author_sort Zhao, HX
collection PubMed
description We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization.
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spelling pubmed-32114602011-11-09 Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers Zhao, HX Yoon, SF Tong, CZ Liu, CY Wang, R Cao, Q Nanoscale Res Lett Nano Express We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization. Springer 2010-09-26 /pmc/articles/PMC3211460/ /pubmed/27502659 http://dx.doi.org/10.1007/s11671-010-9798-4 Text en Copyright ©2010 Zhao et al. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Zhao, HX
Yoon, SF
Tong, CZ
Liu, CY
Wang, R
Cao, Q
Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
title Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
title_full Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
title_fullStr Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
title_full_unstemmed Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
title_short Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
title_sort thermal effects and small signal modulation of 1.3-μm inas/gaas self-assembled quantum-dot lasers
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211460/
https://www.ncbi.nlm.nih.gov/pubmed/27502659
http://dx.doi.org/10.1007/s11671-010-9798-4
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