Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands

The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from pa...

Descripción completa

Detalles Bibliográficos
Autores principales: Das, Samaresh, Das, Kaustuv, Singha, Raj Kumar, Manna, Santanu, Dhar, Achintya, Ray, Samit Kumar, Raychaudhuri, Arup Kumar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211512/
https://www.ncbi.nlm.nih.gov/pubmed/21711943
http://dx.doi.org/10.1186/1556-276X-6-416
Descripción
Sumario:The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail.

Ejemplares similares