Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands

The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from pa...

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Autores principales: Das, Samaresh, Das, Kaustuv, Singha, Raj Kumar, Manna, Santanu, Dhar, Achintya, Ray, Samit Kumar, Raychaudhuri, Arup Kumar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211512/
https://www.ncbi.nlm.nih.gov/pubmed/21711943
http://dx.doi.org/10.1186/1556-276X-6-416
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author Das, Samaresh
Das, Kaustuv
Singha, Raj Kumar
Manna, Santanu
Dhar, Achintya
Ray, Samit Kumar
Raychaudhuri, Arup Kumar
author_facet Das, Samaresh
Das, Kaustuv
Singha, Raj Kumar
Manna, Santanu
Dhar, Achintya
Ray, Samit Kumar
Raychaudhuri, Arup Kumar
author_sort Das, Samaresh
collection PubMed
description The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail.
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spelling pubmed-32115122011-11-09 Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands Das, Samaresh Das, Kaustuv Singha, Raj Kumar Manna, Santanu Dhar, Achintya Ray, Samit Kumar Raychaudhuri, Arup Kumar Nanoscale Res Lett Nano Express The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail. Springer 2011-06-09 /pmc/articles/PMC3211512/ /pubmed/21711943 http://dx.doi.org/10.1186/1556-276X-6-416 Text en Copyright ©2011 Das et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Das, Samaresh
Das, Kaustuv
Singha, Raj Kumar
Manna, Santanu
Dhar, Achintya
Ray, Samit Kumar
Raychaudhuri, Arup Kumar
Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
title Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
title_full Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
title_fullStr Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
title_full_unstemmed Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
title_short Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
title_sort improved infrared photoluminescence characteristics from circularly ordered self-assembled ge islands
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211512/
https://www.ncbi.nlm.nih.gov/pubmed/21711943
http://dx.doi.org/10.1186/1556-276X-6-416
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