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The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface
In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subs...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2010
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211836/ https://www.ncbi.nlm.nih.gov/pubmed/27502664 http://dx.doi.org/10.1007/s11671-010-9790-z |
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author | Lyamkina, AA Dmitriev, DV Galitsyn, Yu G Kesler, VG Moshchenko, SP Toropov, AI |
author_facet | Lyamkina, AA Dmitriev, DV Galitsyn, Yu G Kesler, VG Moshchenko, SP Toropov, AI |
author_sort | Lyamkina, AA |
collection | PubMed |
description | In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups. |
format | Online Article Text |
id | pubmed-3211836 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2010 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-32118362011-11-09 The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface Lyamkina, AA Dmitriev, DV Galitsyn, Yu G Kesler, VG Moshchenko, SP Toropov, AI Nanoscale Res Lett Nano Express In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups. Springer 2010-09-28 /pmc/articles/PMC3211836/ /pubmed/27502664 http://dx.doi.org/10.1007/s11671-010-9790-z Text en Copyright ©2010 Lyamkina et al. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Lyamkina, AA Dmitriev, DV Galitsyn, Yu G Kesler, VG Moshchenko, SP Toropov, AI The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface |
title | The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface |
title_full | The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface |
title_fullStr | The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface |
title_full_unstemmed | The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface |
title_short | The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface |
title_sort | investigation of intermediate stage of template etching with metal droplets by wetting angle analysis on (001) gaas surface |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211836/ https://www.ncbi.nlm.nih.gov/pubmed/27502664 http://dx.doi.org/10.1007/s11671-010-9790-z |
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